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onsemi NDS9407RoHS

Manufacturer
onsemi
MPN
NDS9407
LCSC Part #
C236919
Packaging
SO-8
Customer #
Key Attributes
60V, 3A, P-Channel MOSFET
Datasheetpdf icononsemi NDS9407
In-Stock: 2,380
2,380 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.6614$ 0.66
10+$ 0.5476$ 5.48
30+$ 0.4989$ 14.97
100+$ 0.4372$ 43.72
500+$ 0.4095$ 204.75
1,000+$ 0.3933$ 393.30
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage60V
Output Capacitance(Coss)86pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation12W
RDS(on)240mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 P-Channel
Input Capacitance(Ciss)732pF
Gate Charge(Qg)22nC@10V
Vgs±20V
TypeP-Channel
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Introduction

AI Translation

This P-channel MOSFET is fabricated using onsemi's advanced PowerTrench process, featuring a robust gate structure. It is optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).

Features

AI Translation
  • RDS(ON) = 240 mΩ (at VGS = -4.5 V)
  • -3.0 A, -60 V, RDS(ON) = 150 mΩ (at VGS = -10 V)
  • Low gate charge
  • Fast switching speed
  • High-performance trench technology for ultra-low RDS(ON)
  • High power and current handling capability

Applications

AI Translation
  • Power Management - Load Switches - Battery Protection