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onsemi NDS355AN
| Manufacturer | |
| MPN | NDS355AN |
| LCSC Part # | C236917 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 1.7A SOT-23 |
| Datasheet |  onsemi NDS355AN |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 1.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 195pF | |
| Gate Charge(Qg) | 5nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 1.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 195pF | |
| Gate Charge(Qg) | 5nC@5V | |
| Type | N-Channel |
Introduction
SuperSOT-3 N-Channel logic level enhancement mode power field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package.
Features
- 1.7A, 30 V, RDS(ON)=0.125 Ω @ VGS=4.5 V, RDS(ON)=0.085 Ω @ VGS=10 V
- Industry standard outline SOT-23 surface mount package using proprietary SuperSOT -3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface mount package
Applications
- notebook computers
- portable phones
- PCMCIA cards
- other battery powered circuits
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3263 | $ 1.63 |
| 50+ | $ 0.265 | $ 13.25 |
| 150+ | $ 0.2387 | $ 35.81 |
| 500+ | $ 0.2059 | $ 102.95 |
| 3,000+ | $ 0.1778 | $ 533.40 |
| 6,000+ | $ 0.1691 | $ 1014.60 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 1.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 195pF | |
| Gate Charge(Qg) | 5nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 135pF | |
| Current - Continuous Drain(Id) | 1.7A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF | |
| RDS(on) | 125mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 195pF | |
| Gate Charge(Qg) | 5nC@5V | |
| Type | N-Channel |
Introduction
SuperSOT-3 N-Channel logic level enhancement mode power field effect transistors are produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low inline power loss are needed in a very small outline surface mount package.
Features
- 1.7A, 30 V, RDS(ON)=0.125 Ω @ VGS=4.5 V, RDS(ON)=0.085 Ω @ VGS=10 V
- Industry standard outline SOT-23 surface mount package using proprietary SuperSOT -3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface mount package
Applications
- notebook computers
- portable phones
- PCMCIA cards
- other battery powered circuits
C236917 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |