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onsemi FQD13N06LTMRoHS

Manufacturer
onsemi
MPN
FQD13N06LTM
LCSC Part #
C236914
Packaging
DPAK
Customer #
Key Attributes
MOSFET N-CH 60V 11A DPAK
Datasheetpdf icononsemi FQD13N06LTM
In-Stock: 6,121
6,121 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.7018$ 0.70
10+$ 0.5556$ 5.56
30+$ 0.4825$ 14.48
100+$ 0.4094$ 40.94
500+$ 0.3071$ 153.55
1,000+$ 0.2843$ 284.30
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK
Drain to Source Voltage60V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)115mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
Gate Charge(Qg)6.4nC@48V
TypeN-Channel
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Introduction

AI Translation

This N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

AI Translation
  • 11 A, 60 V, RDS(on)=115 mΩ (Max) @ ID=5.5 A
  • Low Gate Charge (Typ. 4.8 nC)
  • Low Crss (Typ. 17 pF)
  • 100% Avalanche Tested
  • Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers

Applications

AI Translation
  • switched mode power supplies
  • audio amplifier
  • DC motor control
  • variable switching power applications