LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
onsemi FDS4935A product image
  • FDS4935A thumbnail 1
  • FDS4935A thumbnail 2
  • FDS4935A thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi FDS4935ARoHS

Manufacturer
onsemi
MPN
FDS4935A
LCSC Part #
C236903
Packaging
SOIC-8
Customer #
Key Attributes
MOSFET P-CH ARR 30V 7A SOIC-8
Datasheetpdf icononsemi FDS4935A
In-Stock: 60
60 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.446$ 1.45
10+$ 1.2218$ 12.22
30+$ 1.0999$ 33.00
100+$ 0.9602$ 96.02
500+$ 0.9001$ 450.05
1,000+$ 0.8708$ 870.80
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOIC-8
Current - Continuous Drain(Id)7A
Pd - Power Dissipation2W
RDS(on)35mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)152pF
Number2 P-Channel
Input Capacitance(Ciss)1.233nF
Gate Charge(Qg)40nC@5V
Operating Temperature-55℃~+150℃
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This P−Channel MOSFET is a rugged gate version of advanced POWERTRENC process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V - 20 V).

Features

AI Translation
  • -7 A, -30 V. RDS(ON) = 23 mΩ @ ΔVGS = -10 ΔV, RDS(ON) = 35 mΩ @ VGS = -4.5 V
  • Low Gate Charge (15 nC Typical)
  • Fast Switching Speed
  • High Performance Trench Technology for Extremely Low RDS(ON)
  • High Power and Current Handling Capability
  • This is a Pb-Free Device
  • Power Management
  • Load Switch
  • Battery Protection