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onsemi FDN5630RoHS

Manufacturer
onsemi
MPN
FDN5630
LCSC Part #
C236899
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 60V 1.7A SOT-23
Datasheetpdf icononsemi FDN5630
In-Stock: 6,200
6,200 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.2234$ 1.12
50+$ 0.1774$ 8.87
150+$ 0.1577$ 23.66
500+$ 0.1331$ 66.55
3,000+$ 0.1222$ 366.60
6,000+$ 0.1156$ 693.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-23
Drain to Source Voltage60V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)560pF
Gate Charge(Qg)10nC@10V
TypeN-Channel
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Introduction

AI Translation

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

Features

AI Translation
  • 1.7 A, 60 V. RDS(ON)=0.100 Ω @ VGS=10 V; RDS(ON)=0.120 Ω @ VGS=6 V.
  • Optimized for use in high frequency DC/DC converters.
  • Low gate charge.
  • Very fast switching.
  • SuperSOT - 3 provides low RDS(ON) in SOT23 footprint.

Applications

AI Translation
  • DC/DC converter