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onsemi FDMS8820RoHS

Manufacturer
onsemi
MPN
FDMS8820
LCSC Part #
C236897
Packaging
Power-56-8
Customer #
Key Attributes
MOSFET N-CH 30V 160A Power-56-8
Datasheetpdf icononsemi FDMS8820
In-Stock: 80
80 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7115$ 0.71
10+$ 0.6954$ 6.95
30+$ 0.6841$ 20.52
100+$ 0.6728$ 67.28
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower-56-8
Drain to Source Voltage30V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)2.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.315nF
Gate Charge(Qg)88nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

AI Translation
  • Max rDS(on)=2.0 mΩ at VGS = 10 Vs , ID = 28 A
  • Max rDS(on)=2.4 mΩ at VGS = 4.5 Vz , ID = 25 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Applications

AI Translation
  • VRM Vcore Switching For Desktop And Server
  • OringFET / Load Switching
  • DC-DC Conversion