- Pinout Diagram
- Footprint Diagram
onsemi FDG6301N
| Manufacturer | |
| MPN | FDG6301N |
| LCSC Part # | C236893 |
| Packaging | SC-70-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 25V 0.22A SC-70-6 |
| Datasheet |  onsemi FDG6301N |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SC-70-6 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 4Ω@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | 400pC@4.5V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
- 25 V, 0.22 A Continuous, 0.65 A Peak
- RDS(ON)=4 Ω @ VGS=4.5 V
- RDS(ON)=5 Ω @ VGS=2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th)<1.5 V)
- Gate−Source Zener for ESD Ruggedness > 6 kV Human Body Model
- Compact Industry Standard SC70−6 Surface Mount Package
- These Devices are Pb −Free and are RoHS Compliant
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2045 | $ 1.02 |
| 50+ | $ 0.161 | $ 8.05 |
| 150+ | $ 0.1424 | $ 21.36 |
| 500+ | $ 0.1191 | $ 59.55 |
| 3,000+ | $ 0.0986 | $ 295.80 |
| 6,000+ | $ 0.0924 | $ 554.40 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SC-70-6 | |
| Drain to Source Voltage | 25V | |
| Current - Continuous Drain(Id) | 220mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 4Ω@4.5V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 9.5pF | |
| Gate Charge(Qg) | 400pC@4.5V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These dual N−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
- 25 V, 0.22 A Continuous, 0.65 A Peak
- RDS(ON)=4 Ω @ VGS=4.5 V
- RDS(ON)=5 Ω @ VGS=2.7 V
- Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th)<1.5 V)
- Gate−Source Zener for ESD Ruggedness > 6 kV Human Body Model
- Compact Industry Standard SC70−6 Surface Mount Package
- These Devices are Pb −Free and are RoHS Compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |