LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
61% OFF
onsemi FDC634P product image
  • FDC634P thumbnail 1
  • FDC634P thumbnail 2
  • FDC634P thumbnail 3
  • Pinout
  • Footprint
Images for reference only

onsemi FDC634PRoHS

Manufacturer
onsemi
MPN
FDC634P
LCSC Part #
C236888
Packaging
TSOT-23-6
Customer #
Key Attributes
MOSFET P-CH 20V 3.5A TSOT-23-6
Datasheetpdf icononsemi FDC634P
In-Stock: 1,595
1,595 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4482$ 0.1748$ 0.17
10+$ 0.4008$ 0.1564$ 1.56
30+$ 0.3772$ 0.1472$ 4.42
100+$ 0.3535$ 0.1379$ 13.79
500+$ 0.3409$ 0.1330$ 66.50
1,000+$ 0.333$ 0.1299$ 129.90
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTSOT-23-6
Drain to Source Voltage20V
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)56pF
RDS(on)110mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)779pF
Gate Charge(Qg)10nC@4.5V
TypeP-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

AI Translation
  • –3.5 A, RDS(ON)=80 mΩ @ VGS=-4.5 V, RDS(ON)=110 mΩ @ VGS=-2.5 V
  • Low gate charge (7.2 nC typical)
  • High performance trench technology for extremely low RDS(ON)

Applications

AI Translation
  • Battery management
  • Load switch
  • Battery protection