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onsemi MBRS320T3GRoHS

Manufacturer
onsemi
MPN
MBRS320T3G
LCSC Part #
C236151
Packaging
SMC(DO-214AB)
Customer #
Key Attributes
DIODE SCHOTTKY 20V SMC(DO-214AB)
Datasheetpdf icononsemi MBRS320T3G
In-Stock: 7,355
7,355 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2997$ 1.50
50+$ 0.2447$ 12.24
150+$ 0.2211$ 33.17
500+$ 0.1917$ 95.85
2,500+$ 0.1786$ 446.50
5,000+$ 0.1707$ 853.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingSMC(DO-214AB)
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+150℃
Voltage - DC Reverse (Vr) (Max)20V
Voltage - Forward(Vf@If)500mV@3A
Reverse Leakage Current (Ir)2mA@20V
Non-Repetitive Peak Forward Surge Current80A
Current - Rectified4A
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features

AI Translation
  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Very Low Forward Voltage Drop (0.5VMax@3.0A, T_J = 25℃)
  • Excellent Ability to withstand Reverse Avalanche Energy Transients
  • Guard-Ring for Stress Protection
  • Device Passes ISO 7637 Pulse #1
  • SBRS8 and NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Po-Free, Halogen Free/BFR Free and are RoHS Compliant