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onsemi MJD112T4GRoHS

Manufacturer
MPN
MJD112T4G
LCSC Part #
C233690
Packaging
TO-252(DPAK)
Customer #
Key Attributes
Complementary Darlington Power Transistors
Datasheetpdf icononsemi MJD112T4G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-252(DPAK)
Current - Collector Cutoff20uA
Transition frequency(fT)25MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain1000
Pd - Power Dissipation-
typeNPN
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))3V
Operating Temperature-65℃~+150℃@(Tj)

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Features

AI Translation
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves (“−1” Suffix)
  • Electrically Similar to Popular TIP31 and TIP32 Series
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant

Applications

AI Translation
  • switching regulators
  • converters
  • power amplifiers
In-Stock: 3,800
3,800 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5755$ 0.58
10+$ 0.4592$ 4.59
30+$ 0.409$ 12.27
100+$ 0.346$ 34.60
500+$ 0.3185$ 159.25
1,000+$ 0.3023$ 302.30
Standard Packaging2500/Full Reel
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