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onsemi NLAST4599DTT1GRoHS

Manufacturer
MPN
NLAST4599DTT1G
LCSC Part #
C233206
Packaging
TSOP-6-1.5mm
Customer #
Key Attributes
Low Voltage Single SPDT Analog Switch
Datasheetpdf icononsemi NLAST4599DTT1G
In-Stock: 3,528
3,528 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9623$ 0.96
10+$ 0.8146$ 8.15
30+$ 0.7416$ 22.25
100+$ 0.6686$ 66.86
500+$ 0.6248$ 312.40
1,000+$ 0.5745$ 574.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Interface/Analog Switches, Multiplexers, Demultiplexers
Manufactureronsemi
PackagingTSOP-6-1.5mm
FeaturesFault protection;Glitch-free switching
Operating Temperature-55℃~+125℃
Voltage - Supply2V~5.5V
Number of Channels1
Ron30Ω
Con-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The NLAST4599 is an advanced high speed CMOS single pole − double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This switch controls analog and digital voltages that may vary across the full power−supply range (from V_CC to GND). The device has been designed so the ON resistance (R_ON) is much lower and more linear over input voltage than R_ON of typical CMOS analog switches. The channel select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc.

Features

AI Translation
  • Select Pin Compatible with TTL Levels
  • Channel Select Input Over−Voltage Tolerant to 5.5 V
  • Fast Switching and Propagation Speeds
  • Break−Before−Make Circuitry
  • Low Power Dissipation: ICC = 2 μA (Max) at TA = 25 ℃
  • Diode Protection Provided on Channel Select Input
  • Improved Linearity and Lower ON Resistance over Input Voltage
  • Latch−up Performance Exceeds 300 mA
  • ESD Performance: HBM > 2000 V ; MM > 200 V
  • Chip Complexity: 38 FETs
  • NLVAST Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
  • These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant