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onsemi NST857BDP6T5GRoHS

Manufacturer
MPN
NST857BDP6T5G
LCSC Part #
C232622
Packaging
SOT-963-6
Customer #
Key Attributes
TRANS PNP 45V 100mA SOT-963-6
Datasheetpdf icononsemi NST857BDP6T5G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-963-6
Current - Collector Cutoff15nA
DC Current Gain220
Pd - Power Dissipation420mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

The NST857BDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.

Features

AI Translation
  • hFE, 220−475
  • Low VCE(sat), ≤0.3 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb−Free Device
In-Stock: 8,000
8,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1669$ 0.83
50+$ 0.1302$ 6.51
150+$ 0.1144$ 17.16
500+$ 0.0948$ 47.40
2,500+$ 0.086$ 215.00
5,000+$ 0.0808$ 404.00
Standard Packaging8000/Full Reel
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