GigaDevice Semicon Beijing GD5F4GM8UEYIGR

SPI (Serial Peripheral Interface) NAND Flash provides an ultra-cost effective while high density non-volatile memory storage solution for embedded systems, based on an industry-standard NAND Flash memory core. It is an attractive alternative to SPI-NOR and standard parallel NAND Flash, with advanced features, Total pin count is 8, including VCC and GND • Density is 4Gb • Superior write performance and cost per bit over SPI-NOR • Significant low cost than parallel NAND

This low-pin-count NAND Flash memory follows the industry-standard serial peripheral interface, and always remains the same pin out from one density to another. The command sets resemble common SPI-NOR command sets, modified to handle NAND specific functions and added new features.

• User-selectable internal ECC. ECC parity is generated internally during a page program operation. When a page is read to the cache register, the ECC parity is detected and corrects the errors when necessary. The 64-bytes spare area is available even when internal ECC enabled. The device outputs corrected data and returns an ECC error status. • Internal data move or copy back with internal ECC. The device can be easily refreshed and manage garbage collection task, without need of shift in and out of data. This command string can only be used on blocks with the same parity attribute. • Power on Read with internal ECC. The device will automatically read first page of first block to cache after power on, then host can directly read data from cache for easy boot. Also the data is promised correct by internal ECC when ECC enabled.

It is programmed and read in page-based operations, and erased in block-based operations. Data is transferred to or from the NAND Flash memory array, page by page, to a data register and a cache register. The cache register is closest to I/O control circuits and acts as a data buffer for the I/O data; the data register is closest to the memory array and acts as a data buffer for the NAND Flash memory array operation. The cache register functions as the buffer memory to enable page and random data READ/WRITE and copy back operations. These devices also use a SPI status register that reports the status of device operation.

• 4Gb SLC NAND Flash
• Advanced security Features - 20K-Byte OTP Region
• Page Size:
  • Internal ECC On (ECC_EN = 1, default): Page Size：2048-Byte + 64-Byte
  • Internal ECC Off (ECC_EN = 0): Page Size：2048-Byte + 128-Byte
• Program/Erase/Read Speed:
  • Page Program time: 320us typical
  • Block Erase time: 3ms typical
  • Page read time: 120us maximum
• Standard, Dual, Quad SPI, DTR
  • Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
  • Dual SPI: SCLK, CS#, SIO0, SIO1, WP#, HOLD#
  • Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3
  • DTR(Double Transfer Rate) Read : SCLK, CS#, SIO0, SIO1, SIO2, SIO3
• Low Power Consumption:
  • 30mA maximum active current
  • 100uA maximum standby current
• Enhanced access performance - 2Kbyte cache for fast random read
• High Speed Clock Frequency:
  • 3.3V:
    • 133MHz for Standard/Dual/Quad SPI
    • 104MHz for DTR Quad SPI
  • 1.8V:
    • 104MHz for Standard/Dual/Quad SPI
    • 80MHz for DTR Quad SPI
• Advanced Feature for NAND:
  • Factory good block0
  • Deep Power Down (1.8V only)
• Reliability:
  • P/E cycles with ECC: Typical 80K
  • Data retention: 10 Years
• Software/Hardware Write Protection:
  • Write protect all/portion of memory via software
  • Register protection with WP# Pin
  • Power Lock Down Protection
• Internal ECC - 8bits /528byte
• Single Power Supply Voltage:
  • Full voltage range for 1.8V: 1.7V ~ 2.0V
  • Full voltage range for 3.3V: 2.7V ~ 3.6V