GOODWORK 30P03
| Manufacturer | GOODWORKAsian Brands |
| MPN | 30P03 |
| LCSC Part # | C22470946 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 35A TO-252 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 35A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 52nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 35A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 52nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 30P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 30P03 meet the RoHS and Gree Product requirement 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
In-Stock: 565
565 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1202 | $ 0.60 |
| 50+ | $ 0.0968 | $ 4.84 |
| 150+ | $ 0.0851 | $ 12.77 |
| 500+ | $ 0.0763 | $ 38.15 |
| 2,500+ | $ 0.0693 | $ 173.25 |
| 5,000+ | $ 0.0658 | $ 329.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 35A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 52nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | GOODWORK | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 155pF | |
| Current - Continuous Drain(Id) | 35A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 4W | |
| Reverse Transfer Capacitance (Crss@Vds) | 139pF | |
| RDS(on) | 25mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 52nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The 30P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 30P03 meet the RoHS and Gree Product requirement 100% EAS guaranteed with full function reliability approved.
Features
AI Translation
- 100% EAS Guaranteed
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
C22470946 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



