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ElecSuper FQT7N10LTF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
FQT7N10LTF-ES
LCSC Part #
C22464635
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 100V 4A SOT-223
Datasheetpdf iconElecSuper FQT7N10LTF-ES
In-Stock: 255
255 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2419$ 1.21
50+$ 0.1806$ 9.03
150+$ 0.1544$ 23.16
1,000+$ 0.1216$ 121.60
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-223
Drain to Source Voltage100V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)4A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

FQT7N10LTF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product FQT7N10LTF-ES is lead-free.

Features

AI Translation
  • 100V, RDS(ON) = 120 mΩ (typical), VGS = 10V
  • RDS(ON) = 130 mΩ (typical), VGS = 4.5V
  • High-density cell design for low RDS(ON)
  • Halogen-free material
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion