Infineon AIMZH120R080M1TXKSA1

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Infineon
Packaging	TO-247-4
Drain to Source Voltage	1.2kV
Current - Continuous Drain(Id)	31A
Output Capacitance(Coss)	35pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	5.1V
Pd - Power Dissipation	169W
Reverse Transfer Capacitance (Crss@Vds)	2pF
RDS(on)	100mΩ
Number	1 N-channel
Input Capacitance(Ciss)	671pF
Gate Charge(Qg)	24nC
Type	N-Channel

AI Translation

VDSS = 1200 V at Tvj = -55...175°C
IDDC = 31 A at TC = 25°C
RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C
New performance-optimized chip technology (Gen1p) with improved RDSon * A FOM
Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
Best in class switching energy for lower switching losses and reduced cooling efforts
Lowest device capacitances for higher switching speeds and higher power density
A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
Reduced total gate charge QGtot for lower driving power and losses
.XT die attach technology for best in class thermal performance
Sense pin for optimized switching performance
Suitable for HV creepage requirements

AI Translation

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Qty	Unit Price	Total Amount
1+	$ 11.1568	$ 11.16
10+	$ 10.8199	$ 108.20
Standard Packaging30/Full Tube

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Infineon
Packaging	TO-247-4
Drain to Source Voltage	1.2kV
Current - Continuous Drain(Id)	31A
Output Capacitance(Coss)	35pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	5.1V
Pd - Power Dissipation	169W
Reverse Transfer Capacitance (Crss@Vds)	2pF
RDS(on)	100mΩ
Number	1 N-channel
Input Capacitance(Ciss)	671pF
Gate Charge(Qg)	24nC
Type	N-Channel

AI Translation

VDSS = 1200 V at Tvj = -55...175°C
IDDC = 31 A at TC = 25°C
RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C
New performance-optimized chip technology (Gen1p) with improved RDSon * A FOM
Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
Best in class switching energy for lower switching losses and reduced cooling efforts
Lowest device capacitances for higher switching speeds and higher power density
A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
Reduced total gate charge QGtot for lower driving power and losses
.XT die attach technology for best in class thermal performance
Sense pin for optimized switching performance
Suitable for HV creepage requirements

AI Translation