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TI LMG3522R030QRQSTQ1
| Manufacturer | |
| MPN | LMG3522R030QRQSTQ1 |
| LCSC Part # | C22450808 |
| Packaging | VQFN-52 |
| Customer # | |
| Key Attributes | 650V 55A 35mΩ N-Channel 1 N-channel VQFN-52 Power Driver Modules RoHS |
| Datasheet |  TI LMG3522R030QRQSTQ1 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Power Driver Modules | |
| Manufacturer | TI | |
| Packaging | VQFN-52 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 55A | |
| RDS(on) | 35mΩ | |
| Operating Temperature - | -40℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 250 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
LMG3522R030-Q1 GaN FET integrates driver and protection features for switch-mode power converters, enabling designers to achieve new levels of power density and efficiency. The LMG3522R030-Q1 integrates a silicon driver capable of switching speeds up to 150V/ns. Compared to discrete silicon gate drivers, TI's integrated precision gate bias delivers higher switching SOA. This integration, combined with TI's low-inductance package, achieves clean switching with minimal ringing in hard-switching power topologies. Adjustable gate drive strength allows slew rate control from 20V/ns to 150V/ns, enabling active EMI control and optimized switching performance. Advanced power management features include digital temperature reporting and fault detection. GaN FET temperature is reported via a variable duty cycle PWM output, simplifying device load management. Reported faults include over-temperature, over-current, and UVLO monitoring.
Features
- AEC-Q100 qualified for automotive applications
- Temperature Grade 1: ambient temperature (TA) from -40°C to +125°C
- Junction temperature (TJ) from -40°C to +150°C
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high-precision gate bias voltage
- 200V/ns FET turn-off capability
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimized switching performance and reduced EMI
- Operating supply voltage range: 7.5V to 18V
- Robust protection features
- Cycle-by-cycle overcurrent and latched short-circuit protection with response time <100ns
- 720V surge withstand capability during hard switching
- Self-protection via internal over-temperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Top-cooled 12mm×12mm VQFN package with separated electrical and thermal paths for minimum power loop inductance
Applications
- Switching mode power supply converters
- Commercial network and server power supplies
- Commercial telecom rectifiers
- On-board charger (OBC) and wireless charger DC/DC converters
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 39.0707 | $ 39.07 |
| 30+ | $ 37.3734 | $ 1121.20 |
Standard Packaging250/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Power Driver Modules | |
| Manufacturer | TI | |
| Packaging | VQFN-52 | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 55A | |
| RDS(on) | 35mΩ | |
| Operating Temperature - | -40℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Pd - Power Dissipation | - | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 250 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
LMG3522R030-Q1 GaN FET integrates driver and protection features for switch-mode power converters, enabling designers to achieve new levels of power density and efficiency. The LMG3522R030-Q1 integrates a silicon driver capable of switching speeds up to 150V/ns. Compared to discrete silicon gate drivers, TI's integrated precision gate bias delivers higher switching SOA. This integration, combined with TI's low-inductance package, achieves clean switching with minimal ringing in hard-switching power topologies. Adjustable gate drive strength allows slew rate control from 20V/ns to 150V/ns, enabling active EMI control and optimized switching performance. Advanced power management features include digital temperature reporting and fault detection. GaN FET temperature is reported via a variable duty cycle PWM output, simplifying device load management. Reported faults include over-temperature, over-current, and UVLO monitoring.
Features
- AEC-Q100 qualified for automotive applications
- Temperature Grade 1: ambient temperature (TA) from -40°C to +125°C
- Junction temperature (TJ) from -40°C to +150°C
- 650V GaN-on-Si FET with integrated gate driver
- Integrated high-precision gate bias voltage
- 200V/ns FET turn-off capability
- 2MHz switching frequency
- 20V/ns to 150V/ns slew rate for optimized switching performance and reduced EMI
- Operating supply voltage range: 7.5V to 18V
- Robust protection features
- Cycle-by-cycle overcurrent and latched short-circuit protection with response time <100ns
- 720V surge withstand capability during hard switching
- Self-protection via internal over-temperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Top-cooled 12mm×12mm VQFN package with separated electrical and thermal paths for minimum power loop inductance
Applications
- Switching mode power supply converters
- Commercial network and server power supplies
- Commercial telecom rectifiers
- On-board charger (OBC) and wireless charger DC/DC converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |