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Infineon IMBG65R040M2HXTMA1RoHS

Manufacturer
MPN
IMBG65R040M2HXTMA1
LCSC Part #
C22443502
Packaging
TO-263-7
Customer #
Key Attributes
SICFET 650V 49A TO-263-7
Datasheetpdf iconInfineon IMBG65R040M2HXTMA1
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QtyUnit Price(Reference Only)Total Amount
1+$ 6.6603$ 6.66
10+$ 6.4929$ 64.93
30+$ 6.3818$ 191.45
100+$ 6.2708$ 627.08
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-7
Drain to Source Voltage650V
Current - Continuous Drain(Id)49A
Output Capacitance(Coss)96pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))5.6V
Pd - Power Dissipation197W
Reverse Transfer Capacitance (Crss@Vds)5.8pF
RDS(on)49mΩ
Number1 N-channel
Input Capacitance(Ciss)997pF
Gate Charge(Qg)28nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

Built on Infineon's robust 2nd generation Silicon Carbide trench technology: the 650 V CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever-growing system and market needs.

Features

AI Translation
  • Ultra-low switching losses
  • Benchmark gate threshold voltage, VGS(th)=4.5 V
  • Robust against parasitic turn-on even with 0 V turn-off gate voltage
  • Flexible driving voltage and compatible with bipolar driving scheme
  • Robust body diode operation under hard commutation events
  • XT interconnection technology for best-in-class thermal performance

Applications

AI Translation
  • SMPS
  • Solar PV inverters
  • Energy storage and battery formation
  • UPS
  • EV charging infrastructure
  • Motor drives