Infineon FM25V02A-DGQ

The FM25V02A is a 256Kb nonvolatile memory utilizing an advanced ferroelectric process. F-RAM is nonvolatile and performs reads and writes like a RAM. It stores data reliably for 121 years while eliminating the complexities, overhead, and system-level reliability concerns associated with serial Flash, EEPROM, and other nonvolatile memories.

Unlike serial Flash and EEPROM, the FM25V02A performs write operations at bus speed with no write delay. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can begin without delay, eliminating the need for data polling. In addition, the device offers exceptional write endurance compared to other nonvolatile memories. The FM25V02A supports 10¹⁴ read/write cycles — 100 million times more write cycles than EEPROM.

These characteristics make the FM25V02A ideal for nonvolatile memory applications requiring frequent or high-speed writes. Use cases range from data logging where write cycle count may be critical, to demanding industrial control applications where the long write times of serial Flash or EEPROM could result in data loss.

The FM25V02A serves as a direct hardware replacement for serial EEPROM or Flash, delivering significant benefits to users. It employs a high-speed SPI bus that complements F-RAM's high-speed write capability. The device includes a read-only device ID, allowing the host to identify the manufacturer, product density, and product revision. Device specifications are guaranteed over an extended temperature range of -40°C to +105°C.

• 256K-bit Ferroelectric RAM (F-RAM), logically organized as 32K × 8
• High endurance: 100 trillion (10¹⁴) read/write cycles
• 121-year data retention (see Data Retention and Endurance table)
• NoDelay™ writes
• Advanced high-reliability ferroelectric process
• Very fast SPI
• Frequencies up to 33MHz
• Direct hardware replacement for serial Flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
• Hardware protection using Write Protect (WP) pin
• Software protection using Write Disable instruction
• Software block protection for 1/4, 1/2, or entire array
• Device ID
• Manufacturer ID and Product ID
• Low power consumption
• 5mA active current at 33MHz
• 500μA standby current
• 12μA sleep mode current
• Low voltage operation: VDD = 2.7V to 3.6V
• Extended temperature range: -40°C to +105°C
• 8-pin Dual Flat No-Lead (DFN) package
• RoHS compliant