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HXY MOSFET HDESD5V0S1BAQ-7 product image
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HXY MOSFET HDESD5V0S1BAQ-7RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
HDESD5V0S1BAQ-7
LCSC Part #
C22440039
Packaging
SOD-323
Customer #
Key Attributes
ESD DIODE 5VWM 9.8VC 20VC SOD-323
Datasheetpdf iconHXY MOSFET HDESD5V0S1BAQ-7
In-Stock: 130
130 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0285$ 0.29
100+$ 0.0278$ 2.78
300+$ 0.0274$ 8.22
1,000+$ 0.027$ 27.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ManufacturerHXY MOSFET
PackagingSOD-323
Clamping Voltage9.8V;20V
Operating Temperature-40℃~+125℃
Peak Pulse Current (Ipp)25A
Peak Pulse Power Dissipation (Ppp)500W@8/20us
Voltage - Breakdown7.8V
Number of Channels1
typeESD
Reverse Leakage Current (Ir)1uA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)5V

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The HDESD5V0S1BAQ-7 device protects sensitive semiconductor components from damage or interference caused by ESD and other voltage-induced transient events. Its excellent clamping capability, low leakage current, low capacitance, and fast response time provide robust protection for designs exposed to ESD environments. The device offers designers flexibility to protect a single bidirectional line in applications where arrays are not suitable.

Features

AI Translation
  • Transient protection for high-speed data lines, compliant with IEC 61000-4-2 (ESD) ±30kV (contact discharge) and ±30kV (air discharge), and IEC 61000-4-4 (EFT) 40A (5/50 ns)
  • Peak power dissipation: 500W (8/20us)
  • Working voltage: 5V
  • Protects one Vcc or data line
  • Low clamping voltage
  • Low leakage current