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MACOM CGH40010FRoHS

Manufacturer
MPN
CGH40010F
LCSC Part #
C22423412
Packaging
SMD
Customer #
Key Attributes
120V 1.5A 3V 1 N-channel SMD RF FETs, MOSFETs RoHS
Datasheetpdf iconMACOM CGH40010F
In-Stock: 3
3 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 118.0629$ 118.06
30+$ 112.5943$ 3377.83
Standard Packaging250/Full Tray
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerMACOM
PackagingSMD
Drain to Source Voltage120V
Current - Continuous Drain(Id)1.5A
TypeN-Channel
RDS(on)-
Gate Threshold Voltage (Vgs(th))3V
Operating Temperature-40℃~+150℃
Pd - Power Dissipation-
Technology-
Reverse Transfer Capacitance (Crss@Vds)0.2pF
Number1 N-channel
Input Capacitance(Ciss)4.5pF
Gate Charge(Qg)-
Output Capacitance(Coss)1.3pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

CGH40010 is an unmatched gallium nitride (GaN) high electron mobility transistor (HEMT). Operating from a 28-volt supply rail, it provides a general-purpose broadband solution for a wide variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capability of GaN HEMTs make the CGH40010 ideal for both linear and compressed amplifier circuits. The transistor is available in both a screw-mount flange package and a solder-down pill package. Package Types: 440166 and 440196 Part Numbers: CGH40010F and CGH40010P

Features

AI Translation
  • Up to 6 GHz operating frequency
  • 16 dB small-signal gain at 2.0 GHz
  • 14 dB small-signal gain at 4.0 GHz
  • Typical PSAT of 13 W
  • 65% efficiency at PSAT
  • 28 V operating voltage

Applications

AI Translation
  • Two-way dedicated radio
  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation

Class A, AB, linear amplifiers for OFDM, W-CDMA, EDGE, CDMA waveforms