Infineon AIMZH120R020M1TXKSA1

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Infineon
Packaging	TO-247-4
Drain to Source Voltage	1.2kV
Current - Continuous Drain(Id)	100A
Output Capacitance(Coss)	126pF
Operating Temperature -	-55℃~+175℃
Gate Threshold Voltage (Vgs(th))	5.1V
Pd - Power Dissipation	429W
RDS(on)	25mΩ
Reverse Transfer Capacitance (Crss@Vds)	7pF
Number	1 N-channel
Input Capacitance(Ciss)	2.667nF
Gate Charge(Qg)	82nC
Type	N-Channel

AI Translation

VDSS = 1200 V at TVj = -55…175℃
IDDC = 100 A at TC = 25℃
RDS(on) = 19 mΩ at VGS = 20 V, TVj = 25℃
New performance-optimized chip technology (Gen1p) with improved RDS(on)
A FOM
Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
Best in class switching energy for lower switching losses and reduced cooling efforts
Lowest device capacitances for higher switching speeds and higher power density
A combination of low CRSS/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
Reduced total gate charge QGtot for lower driving power and losses
XT die attach technology for best in class thermal performance
Sense pin for optimized switching performance
Suitable for HV creepage requirements

AI Translation

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Qty	Unit Price(Reference Only)	Total Amount
1+	$ 20.0978	$ 20.10
10+	$ 19.3957	$ 193.96
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