LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
BL BLP021N10-T product image
  • BLP021N10-T thumbnail 1
  • BLP021N10-T thumbnail 2
  • BLP021N10-T thumbnail 3
  • Pinout
  • Footprint
Images for reference only

BL BLP021N10-TRoHS

Manufacturer
BLAsian Brands
MPN
BLP021N10-T
LCSC Part #
C22396747
Packaging
TOLL-8
Customer #
Key Attributes
MOSFET N-CH 100V 292A TOLL-8
Datasheetpdf iconBL BLP021N10-T
In-Stock: 604
604 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.1158$ 1.12
10+$ 0.9439$ 9.44
30+$ 0.858$ 25.74
100+$ 0.7736$ 77.36
500+$ 0.7217$ 360.85
1,200+$ 0.6958$ 834.96
Standard Packaging1200/Full Reel
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerBL
PackagingTOLL-8
Drain to Source Voltage100V
Current - Continuous Drain(Id)292A
Output Capacitance(Coss)2.78nF
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation312.5W
RDS(on)1.6mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)532pF
Number1 N-channel
Input Capacitance(Ciss)11.132nF
Gate Charge(Qg)168nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Introduction

AI Translation

BLP021N10 is an N-channel enhancement-mode power MOSFET utilizing advanced Double Trench II technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. The device is suitable for battery management systems (BMS) and high-current switching applications.

Features

AI Translation
  • Fast switching
  • Low on-resistance
  • Low gate charge
  • Low reverse transfer capacitance
  • High avalanche ruggedness
  • RoHS compliant

Applications

AI Translation
  • Battery Management Systems (BMS)
  • High-Current Switching Applications