HXY MOSFET HCG65200DBA

Manufacturer	HXY MOSFETAsian Brands
MPN	HCG65200DBA
LCSC Part #	C22396443
Packaging	DFN-8L(5x6)
Customer #
Key Attributes	GaN-on-Silicon Enhancement-mode Power Transistor
Datasheet	HXY MOSFET HCG65200DBA

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Drain to Source Voltage	650V
Output Capacitance(Coss)	27pF
Current - Continuous Drain(Id)	10A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	75W
Technology	E-mode
RDS(on)	160mΩ
Reverse Transfer Capacitance (Crss@Vds)	0.4pF
Number	1 N-channel
Input Capacitance(Ciss)	83pF
Gate Charge(Qg)	2.3nC
Type	N-Channel

In-Stock: 25

25 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 4.8834	$ 4.88
10+	$ 4.1743	$ 41.74
30+	$ 3.7538	$ 112.61
100+	$ 3.327	$ 332.70
500+	$ 3.1303	$ 1565.15
1,000+	$ 3.043	$ 3043.00
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN-8L(5x6)
Drain to Source Voltage	650V
Output Capacitance(Coss)	27pF
Current - Continuous Drain(Id)	10A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	75W
Technology	E-mode
RDS(on)	160mΩ
Reverse Transfer Capacitance (Crss@Vds)	0.4pF
Number	1 N-channel
Input Capacitance(Ciss)	83pF
Gate Charge(Qg)	2.3nC
Type	N-Channel