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VBsemi Elec SI2321DS-T1-GE3-VB product image
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VBsemi Elec SI2321DS-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SI2321DS-T1-GE3-VB
LCSC Part #
C22389949
Packaging
SOT-23(TO-236)
Customer #
Key Attributes
MOSFET P-CH 20V 4A SOT-23(TO-236)
Datasheetpdf iconVBsemi Elec SI2321DS-T1-GE3-VB
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0655$ 0.0557$ 0.56
100+$ 0.0518$ 0.0441$ 4.41
300+$ 0.045$ 0.0383$ 11.49
3,000+$ 0.0398$ 0.0339$ 101.70
6,000+$ 0.0357$ 0.0304$ 182.40
9,000+$ 0.0336$ 0.0286$ 257.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingSOT-23(TO-236)
Drain to Source Voltage20V
Current - Continuous Drain(Id)4A
Output Capacitance(Coss)180pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
RDS(on)60mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)155pF
Number1 P-Channel
Input Capacitance(Ciss)835pF
Gate Charge(Qg)10nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Compliant with halogen-free requirements as defined by IEC 61249-2-21
  • Trench power MOSFET
  • 100% gate resistance (Rg) tested
  • Compliant with RoHS Directive 2002/95/EC

Applications

AI Translation
  • Load switch
  • Power amplifier (PA) switch
  • DC/DC converter