VBsemi Elec FDC6320C-NL-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | FDC6320C-NL-VB |
| LCSC Part # | C22389694 |
| Packaging | TSOP-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 20V 5.5A TSOP-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TSOP-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.5A;3.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Pd - Power Dissipation | 1.15W | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- RoHS compliant per directive 2002/95/EC
Applications
AI Translation
- Primary-side switch - N-channel MOSFET
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2199$ 0.1870 | $ 0.94 |
| 50+ | $ 0.1726$ 0.1468 | $ 7.34 |
| 150+ | $ 0.1524$ 0.1296 | $ 19.44 |
| 500+ | $ 0.1272$ 0.1082 | $ 54.10 |
| 3,000+ | $ 0.1159$ 0.0986 | $ 295.80 |
| 6,000+ | $ 0.1092$ 0.0929 | $ 557.40 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TSOP-6 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5.5A;3.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Pd - Power Dissipation | 1.15W | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- RoHS compliant per directive 2002/95/EC
Applications
AI Translation
- Primary-side switch - N-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



