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ElecSuper FDV303N-ES product image
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ElecSuper FDV303N-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
FDV303N-ES
LCSC Part #
C22379630
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 20V 1.25A SOT-23
Datasheetpdf iconElecSuper FDV303N-ES
In-Stock: 30,000
30,000 In stock, ships now
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QtyUnit PriceTotal Amount
50+$ 0.0199$ 1.00
500+$ 0.0155$ 7.75
3,000+$ 0.0131$ 39.30
6,000+$ 0.0116$ 69.60
24,000+$ 0.0103$ 247.20
51,000+$ 0.0096$ 489.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)1.25A
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation710mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)220mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)33pF
Gate Charge(Qg)800pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

FDV303N-ES is an N-channel enhancement mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product FDV303N-ES is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 220 mΩ (typ) at VGS = 4.5V
  • RDS(ON) = 290 mΩ (typ) at VGS = 2.5V
  • RDS(ON) = 420 mΩ (typ) at VGS = 1.8V
  • Trench MOSFET technology
  • High-density cell design for low RDS(on)
  • Halogen-free material
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion