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ElecSuper IRFR120NTRPBF-ES product image
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ElecSuper IRFR120NTRPBF-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
IRFR120NTRPBF-ES
LCSC Part #
C22379628
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 100V 9A TO-252
Datasheetpdf iconElecSuper IRFR120NTRPBF-ES
In-Stock: 425
425 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2047$ 1.02
50+$ 0.1529$ 7.65
150+$ 0.1306$ 19.59
500+$ 0.1029$ 51.45
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingTO-252
Drain to Source Voltage100V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)100mΩ@10V;110mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)605pF
Gate Charge(Qg)11nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRFR120NTRPBF-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product IRFR120NTRPBF-ES is lead-free.

Features

AI Translation
  • 100V, RDS(ON) = 100 mΩ (typical), VGS = 10V
  • RDS(ON) = 110 mΩ (typical), VGS = 4.5V
  • Trench MOSFET technology
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop computers
  • DC/DC conversion