HXY MOSFET CSD17579Q3A-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN3x3-8L
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	109pF
RDS(on)	7.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel

In-Stock: 215

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Qty	Unit Price	Total Amount
5+	$ 0.1862	$ 0.93
50+	$ 0.1462	$ 7.31
150+	$ 0.1291	$ 19.37
500+	$ 0.1077	$ 53.85
2,500+	$ 0.0982	$ 245.50
5,000+	$ 0.0925	$ 462.50
Standard Packaging5000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN3x3-8L
Output Capacitance(Coss)	131pF
Pd - Power Dissipation	37.5W
Configuration	Standalone
Drain to Source Voltage	30V
Current - Continuous Drain(Id)	35A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Reverse Transfer Capacitance (Crss@Vds)	109pF
RDS(on)	7.5mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	940pF
Gate Charge(Qg)	9.8nC@4.5V
Vgs	±20V
Type	N-Channel