HXY MOSFET NDS332P-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	58pF
Current - Continuous Drain(Id)	2.3A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	650mW
Reverse Transfer Capacitance (Crss@Vds)	32pF
RDS(on)	130mΩ@4.5V
Number	1 P-Channel
Input Capacitance(Ciss)	285pF
Gate Charge(Qg)	2.9nC@4.5V
Type	P-Channel

In-Stock: 40

40 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
10+	$ 0.0433	$ 0.43
100+	$ 0.0343	$ 3.43
300+	$ 0.0297	$ 8.91
3,000+	$ 0.0263	$ 78.90
6,000+	$ 0.0236	$ 141.60
9,000+	$ 0.0222	$ 199.80
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	58pF
Current - Continuous Drain(Id)	2.3A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	650mW
Reverse Transfer Capacitance (Crss@Vds)	32pF
RDS(on)	130mΩ@4.5V
Number	1 P-Channel
Input Capacitance(Ciss)	285pF
Gate Charge(Qg)	2.9nC@4.5V
Type	P-Channel