HXY MOSFET FDD8870-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	850pF
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Pd - Power Dissipation	62.5W
Reverse Transfer Capacitance (Crss@Vds)	85pF
RDS(on)	3mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Type	N-Channel

In-Stock: 30

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Qty	Unit Price	Total Amount
5+	$ 0.2372	$ 1.19
50+	$ 0.1862	$ 9.31
150+	$ 0.1644	$ 24.66
500+	$ 0.1372	$ 68.60
2,500+	$ 0.1251	$ 312.75
5,000+	$ 0.1178	$ 589.00
Standard Packaging2500/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	850pF
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Pd - Power Dissipation	62.5W
Reverse Transfer Capacitance (Crss@Vds)	85pF
RDS(on)	3mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	2.485nF
Gate Charge(Qg)	20.6nC@10V
Type	N-Channel