HXY MOSFET DMN2004TK-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-523
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	7pF
Current - Continuous Drain(Id)	800mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	150mW
Reverse Transfer Capacitance (Crss@Vds)	4.5pF
RDS(on)	180mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	50pF
Type	N-Channel

In-Stock: 40

40 In stock, ships now

Not recommended for new designs

Once stock is depleted, this item will be marked as "Out of Stock."

Notify Me

Qty	Unit Price	Total Amount
10+	$ 0.0723	$ 0.72
100+	$ 0.0572	$ 5.72
300+	$ 0.0496	$ 14.88
3,000+	$ 0.0439	$ 131.70
6,000+	$ 0.0394	$ 236.40
9,000+	$ 0.0371	$ 333.90
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-523
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	7pF
Current - Continuous Drain(Id)	800mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	150mW
Reverse Transfer Capacitance (Crss@Vds)	4.5pF
RDS(on)	180mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	50pF
Type	N-Channel