HXY MOSFET IRF1407PBF-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220
Configuration	Standalone
Drain to Source Voltage	120V
Output Capacitance(Coss)	423pF
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Pd - Power Dissipation	119W
Reverse Transfer Capacitance (Crss@Vds)	12pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.614nF
Gate Charge(Qg)	60.8nC@10V
Type	N-Channel

In-Stock: 265

265 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.9307$ 0.8191	$ 0.82
10+	$ 0.7484$ 0.6586	$ 6.59
50+	$ 0.6581$ 0.5792	$ 28.96
100+	$ 0.5694$ 0.5011	$ 50.11
500+	$ 0.5146$ 0.4529	$ 226.45
1,000+	$ 0.4871$ 0.4287	$ 428.70
Standard Packaging50/Full Tube

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-220
Configuration	Standalone
Drain to Source Voltage	120V
Output Capacitance(Coss)	423pF
Current - Continuous Drain(Id)	120A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	3V
Pd - Power Dissipation	119W
Reverse Transfer Capacitance (Crss@Vds)	12pF
RDS(on)	6mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.614nF
Gate Charge(Qg)	60.8nC@10V
Type	N-Channel