HXY MOSFET NTD5867NLT4G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	60pF
Current - Continuous Drain(Id)	20A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Pd - Power Dissipation	34.7W
Reverse Transfer Capacitance (Crss@Vds)	49pF
RDS(on)	25mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.355nF
Gate Charge(Qg)	22nC@10V
Type	N-Channel

In-Stock: 45

45 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
5+	$ 0.1806	$ 0.90
50+	$ 0.1418	$ 7.09
150+	$ 0.1252	$ 18.78
500+	$ 0.1045	$ 52.25
2,500+	$ 0.0952	$ 238.00
5,000+	$ 0.0897	$ 448.50
Standard Packaging2500/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	TO-252-2L
Configuration	Standalone
Drain to Source Voltage	60V
Output Capacitance(Coss)	60pF
Current - Continuous Drain(Id)	20A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Pd - Power Dissipation	34.7W
Reverse Transfer Capacitance (Crss@Vds)	49pF
RDS(on)	25mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	1.355nF
Gate Charge(Qg)	22nC@10V
Type	N-Channel