HXY MOSFET FDMC8854-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN3x3-8L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	400pF
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	62.5W
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Type	N-Channel

In-Stock: 35

35 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
5+	$ 0.3009	$ 1.50
50+	$ 0.2363	$ 11.82
150+	$ 0.2086	$ 31.29
500+	$ 0.174	$ 87.00
2,500+	$ 0.1586	$ 396.50
5,000+	$ 0.1494	$ 747.00
Standard Packaging5000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN3x3-8L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	400pF
Current - Continuous Drain(Id)	60A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	62.5W
Reverse Transfer Capacitance (Crss@Vds)	315pF
RDS(on)	4mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	3.075nF
Gate Charge(Qg)	31.6nC@4.5V
Type	N-Channel