HXY MOSFET FDN339AN-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23-3L
Output Capacitance(Coss)	295pF
Pd - Power Dissipation	1.25W
Configuration	Standalone
Drain to Source Voltage	20V
Current - Continuous Drain(Id)	6A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	650mV
Reverse Transfer Capacitance (Crss@Vds)	96pF
RDS(on)	22mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	500pF
Gate Charge(Qg)	10nC@4.5V
Vgs	±12V
Type	N-Channel

In-Stock: 40

40 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
10+	$ 0.0571	$ 0.57
100+	$ 0.0452	$ 4.52
300+	$ 0.0392	$ 11.76
3,000+	$ 0.0347	$ 104.10
6,000+	$ 0.0311	$ 186.60
9,000+	$ 0.0293	$ 263.70
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-23-3L
Output Capacitance(Coss)	295pF
Pd - Power Dissipation	1.25W
Configuration	Standalone
Drain to Source Voltage	20V
Current - Continuous Drain(Id)	6A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	650mV
Reverse Transfer Capacitance (Crss@Vds)	96pF
RDS(on)	22mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	500pF
Gate Charge(Qg)	10nC@4.5V
Vgs	±12V
Type	N-Channel