HXY MOSFET DMN2065UW-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-323
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	120pF
Current - Continuous Drain(Id)	2A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	300mW
Reverse Transfer Capacitance (Crss@Vds)	80pF
RDS(on)	55mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	300pF
Type	N-Channel

In-Stock: 35

35 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
5+	$ 0.0778	$ 0.39
50+	$ 0.0615	$ 3.08
150+	$ 0.0534	$ 8.01
500+	$ 0.0473	$ 23.65
3,000+	$ 0.0424	$ 127.20
6,000+	$ 0.04	$ 240.00
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOT-323
Configuration	Standalone
Drain to Source Voltage	20V
Output Capacitance(Coss)	120pF
Current - Continuous Drain(Id)	2A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	700mV
Pd - Power Dissipation	300mW
Reverse Transfer Capacitance (Crss@Vds)	80pF
RDS(on)	55mΩ@4.5V
Number	1 N-channel
Input Capacitance(Ciss)	300pF
Type	N-Channel