HXY MOSFET BSC0901NS-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN5x6-8L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	340pF
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	187W
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC@10V
Type	N-Channel

In-Stock: 38

38 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
1+	$ 0.4887	$ 0.49
10+	$ 0.384	$ 3.84
30+	$ 0.3396	$ 10.19
100+	$ 0.2825	$ 28.25
500+	$ 0.2587	$ 129.35
1,000+	$ 0.2428	$ 242.80
Standard Packaging5000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	DFN5x6-8L
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	340pF
Current - Continuous Drain(Id)	150A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	187W
Reverse Transfer Capacitance (Crss@Vds)	225pF
RDS(on)	2mΩ@10V
Number	1 N-channel
Input Capacitance(Ciss)	4.345nF
Gate Charge(Qg)	56.9nC@10V
Type	N-Channel