LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET IRLR3410PBF-HXY product image
  • IRLR3410PBF-HXY thumbnail 1
  • IRLR3410PBF-HXY thumbnail 2
  • IRLR3410PBF-HXY thumbnail 3
  • Pinout
  • Footprint
Images for reference only

HXY MOSFET IRLR3410PBF-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IRLR3410PBF-HXY
LCSC Part #
C22366630
Packaging
TO-252-2L
Customer #
Key Attributes
MOSFET N-CH 100V 20A TO-252-2L
Datasheetpdf iconHXY MOSFET IRLR3410PBF-HXY
In-Stock: 165
165 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.261$ 1.31
50+$ 0.2049$ 10.25
150+$ 0.1809$ 27.14
500+$ 0.1509$ 75.45
2,500+$ 0.1376$ 344.00
5,000+$ 0.1296$ 648.00
Standard Packaging2500/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)37pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.535nF
Gate Charge(Qg)26.2nC@10V
TypeN-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IRLR3410PBF employs advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-Source Voltage (VDS) = 100V, Drain Current (ID) = 20A
  • On-State Resistance (RDS(ON)) < 87mΩ at Gate-Source Voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply