HXY MOSFET NTMD4840NR2G-HXY

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	80pF
Current - Continuous Drain(Id)	8.5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	1.5W
Reverse Transfer Capacitance (Crss@Vds)	65pF
RDS(on)	17mΩ@10V
Number	2 N-Channel
Input Capacitance(Ciss)	572pF
Gate Charge(Qg)	6nC@4.5V
Type	N-Channel

In-Stock: 40

40 In stock, ships now

Not recommended for new designs

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Qty	Unit Price	Total Amount
5+	$ 0.2137	$ 1.07
50+	$ 0.1679	$ 8.40
150+	$ 0.1482	$ 22.23
500+	$ 0.1236	$ 61.80
3,000+	$ 0.1127	$ 338.10
6,000+	$ 0.1062	$ 637.20
Standard Packaging3000/Full Reel

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	HXY MOSFET
Packaging	SOP-8
Configuration	Standalone
Drain to Source Voltage	30V
Output Capacitance(Coss)	80pF
Current - Continuous Drain(Id)	8.5A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	2.5V
Pd - Power Dissipation	1.5W
Reverse Transfer Capacitance (Crss@Vds)	65pF
RDS(on)	17mΩ@10V
Number	2 N-Channel
Input Capacitance(Ciss)	572pF
Gate Charge(Qg)	6nC@4.5V
Type	N-Channel