LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
HXY MOSFET FDS6675BZ-HXY product image
Images for reference only

HXY MOSFET FDS6675BZ-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDS6675BZ-HXY
LCSC Part #
C22366556
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 12A SOP-8
Datasheetpdf iconHXY MOSFET FDS6675BZ-HXY
In-Stock: 125
125 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2644$ 1.32
50+$ 0.2076$ 10.38
150+$ 0.1833$ 27.50
500+$ 0.1529$ 76.45
3,000+$ 0.1394$ 418.20
6,000+$ 0.1313$ 787.80
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)206pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.77nF
Gate Charge(Qg)22nC@10V
TypeP-Channel
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDS6675BZ utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = -30V, drain current (ID) = -12A
  • On-resistance (RDS(ON)) < 15mΩ at gate-source voltage (VGS) = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply