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HXY MOSFET FDS6675-HXY product image
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HXY MOSFET FDS6675-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
FDS6675-HXY
LCSC Part #
C22366555
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 12A SOP-8
Datasheetpdf iconHXY MOSFET FDS6675-HXY
In-Stock: 75
75 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2465$ 1.23
50+$ 0.1936$ 9.68
150+$ 0.1709$ 25.64
500+$ 0.1426$ 71.30
3,000+$ 0.13$ 390.00
6,000+$ 0.1224$ 734.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOP-8
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)206pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.77nF
Gate Charge(Qg)22nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The FDS6675 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -30V, ID = -12A
  • RDS(ON) < 15mΩ (at VGS = 10V)

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply