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FUXINSEMI C2M0045170D product image
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FUXINSEMI C2M0045170DRoHS

Manufacturer
FUXINSEMIAsian Brands
MPN
C2M0045170D
LCSC Part #
C22365192
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
Datasheetpdf iconFUXINSEMI C2M0045170D

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerFUXINSEMI
PackagingTO-247-3
Drain to Source Voltage1.7kV
Output Capacitance(Coss)171pF
Current - Continuous Drain(Id)72A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation520W
Reverse Transfer Capacitance (Crss@Vds)6.7pF
RDS(on)70mΩ
Number1 N-channel
Input Capacitance(Ciss)3.672nF
Gate Charge(Qg)188nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Features

AI Translation
  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant

Applications

AI Translation
  • Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC converters
  • Motor Drive
  • Pulsed Power Applications
In-Stock: 30
30 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 30.0584$ 30.06
30+$ 28.5229$ 855.69
Standard Packaging30/Full Tube
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