LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
20% OFF
FUXINSEMI C2M1000170D product image
  • C2M1000170D thumbnail 1
  • C2M1000170D thumbnail 2
  • C2M1000170D thumbnail 3
  • Pinout
  • Footprint
Images for reference only

FUXINSEMI C2M1000170DRoHS

Manufacturer
FUXINSEMIAsian Brands
MPN
C2M1000170D
LCSC Part #
C22365191
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET N-Channel EnhancementMode
Datasheetpdf iconFUXINSEMI C2M1000170D
In-Stock: 435
435 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.7293$ 2.1835$ 2.18
10+$ 2.3389$ 1.8712$ 18.71
30+$ 2.0943$ 1.6755$ 50.27
90+$ 1.8433$ 1.4747$ 132.72
510+$ 1.7315$ 1.3852$ 706.45
1,200+$ 1.6813$ 1.3451$ 1614.12
Standard Packaging30/Full Tube
Better price for more quantity?
$

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerFUXINSEMI
PackagingTO-247-3
Drain to Source Voltage1.7kV
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.4Ω
Number1 N-channel
Input Capacitance(Ciss)215pF
Gate Charge(Qg)22nC
TypeN-Channel
Report an ErrorShow similar products (0) >

Features

AI Translation
  • High Speed Switching with Low Capacitances
  • High Blocking Voltage with Low Rps(on)
  • Easy to Parallel and Simple to Drive
  • Ultra-low Drain-gate capacitance
  • Halogen Free, RoHS Compliant
  • Higher System Efficiency
  • Increased System Switching Frequency
  • Reduced Cooling Requirements
  • Increased System Reliability

Applications

AI Translation
  • Auxiliary Power Supplies
  • Switch Mode Power Supplies
  • High-voltage Capacitive Loads