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FUXINSEMI C2M1000170D

Manufacturer
FUXINSEMIAsian Brands
MPN
C2M1000170D
LCSC Part #
C22365191
Packaging
TO-247-3
Customer #
Key Attributes
Silicon Carbide Power MOSFET N-Channel EnhancementMode
DatasheetFUXINSEMI C2M1000170D
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 379
379 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.7521$ 2.2017$ 2.20
10+$ 2.3585$ 1.8868$ 18.87
30+$ 2.1119$ 1.6896$ 50.69
90+$ 1.8587$ 1.4870$ 133.83
510+$ 1.746$ 1.3968$ 712.37
1,200+$ 1.6954$ 1.3564$ 1627.68
Standard Packaging30/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerFUXINSEMI
PackagingTO-247-3
Operating Temperature-55℃~+150℃
Drain to Source Voltage1.7kV
Output Capacitance(Coss)19pF
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.4Ω
Number1 N-channel
Input Capacitance(Ciss)215pF
Gate Charge(Qg)22nC
TypeN-Channel

Features

AI Translation
  • High Speed Switching with Low Capacitances
  • High Blocking Voltage with Low Rps(on)
  • Easy to Parallel and Simple to Drive
  • Ultra-low Drain-gate capacitance
  • Halogen Free, RoHS Compliant
  • Higher System Efficiency
  • Increased System Switching Frequency
  • Reduced Cooling Requirements
  • Increased System Reliability

Applications

AI Translation
  • Auxiliary Power Supplies
  • Switch Mode Power Supplies
  • High-voltage Capacitive Loads

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
C2M0045170DFUXINSEMITO-247-324$15.4796 $30.9591