LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Cart
AGMSEMI AGM312AP product image
  • AGM312AP thumbnail 1
  • AGM312AP thumbnail 2
  • AGM312AP thumbnail 3
  • Pinout
  • Footprint
Images for reference only

AGMSEMI AGM312APRoHS

Manufacturer
AGMSEMIAsian Brands
MPN
AGM312AP
LCSC Part #
C22364314
Packaging
PDFN-8(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH 30V 18A PDFN-8(3.3x3.3)
Datasheetpdf iconAGMSEMI AGM312AP
In-Stock: 280
280 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1058$ 0.53
50+$ 0.0839$ 4.20
150+$ 0.073$ 10.95
500+$ 0.0648$ 32.40
2,500+$ 0.0568$ 142.00
5,000+$ 0.0536$ 268.00
Standard Packaging5000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAGMSEMI
PackagingPDFN-8(3.3x3.3)
Drain to Source Voltage30V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation37W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)9mΩ@10V;14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)345pF
Gate Charge(Qg)4.1nC@4.5V
Report an ErrorShow similar products (0) >

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

AGM312AP combines advanced trench MOSFET technology with a low-resistance package to achieve an extremely low RDS(ON). The device is well suited for load switch and battery protection applications.

Features

AI Translation
  • Advanced high cell density trench technology
  • Low RDS(ON) to minimize conduction losses
  • Low gate charge for fast switching
  • Low thermal resistance
  • 100% avalanche tested
  • 100% DVDS tested

Applications

AI Translation
  • MB/VGA Vcore
  • Synchronous rectifier for switching power supply secondary side
  • Point-of-load applications
  • Brushless DC motor driver