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ElecSuper SI4435DY-ES product image
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ElecSuper SI4435DY-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
SI4435DY-ES
LCSC Part #
C22363746
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 10.5A SOP-8
Datasheetpdf iconElecSuper SI4435DY-ES
In-Stock: 2,990
2,990 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1174$ 0.59
50+$ 0.0877$ 4.39
150+$ 0.0729$ 10.94
500+$ 0.0618$ 30.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)10.5A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)13.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.23nF
Gate Charge(Qg)26.4nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

SI4435DY-ES is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) at low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product SI4435DY-ES is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 13.5 mΩ (typical) @ VGS = -10 V
  • RDS(ON) = 18.5 mΩ (typical) @ VGS = -4.5 V
  • Fast switching
  • High-density cell design for low RDS(on)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion