LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
ElecSuper FDS4435A-ES product image
  • FDS4435A-ES thumbnail 1
  • FDS4435A-ES thumbnail 2
  • FDS4435A-ES thumbnail 3
  • Pinout
  • Footprint
Images for reference only

ElecSuper FDS4435A-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
FDS4435A-ES
LCSC Part #
C22363745
Packaging
SOP-8
Customer #
Key Attributes
MOSFET P-CH 30V 10.5A SOP-8
Datasheetpdf iconElecSuper FDS4435A-ES
In-Stock: 3,000
3,000 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1155$ 0.58
50+$ 0.0863$ 4.32
150+$ 0.0717$ 10.76
500+$ 0.0608$ 30.40
Standard Packaging3000/Full Reel
Better price for more quantity?
$

Products Specifications

Show similar products (0) >
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)160pF
Current - Continuous Drain(Id)10.5A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)13.5mΩ@10V;18.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.23nF
Gate Charge(Qg)26.4nC@10V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

FDS4435A-ES is a P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it achieves excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product FDS4435A-ES is lead-free.

Features

AI Translation
  • 30V, RDS(ON) = 13.5 mΩ (typical), VGS = -10V
  • RDS(ON) = 18.5 mΩ (typical), VGS = -4.5V
  • Fast switching
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and reliable
  • Avalanche rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion