HUASHUO HSBB0115
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSBB0115 |
| LCSC Part # | C22359236 |
| Packaging | PRPAK3x3-8L |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 12A PRPAK3x3-8L |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.029nF | |
| Gate Charge(Qg) | 44.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.029nF | |
| Gate Charge(Qg) | 44.5nC@10V | |
| Type | P-Channel |
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Introduction
AI Translation
HSBB0115 utilizes advanced trench MOSFET technology, offering excellent on-resistance RDS(ON) and gate charge, suitable for a wide range of applications. HSBB0115 complies with RoHS and green product requirements, is 100% guaranteed for EAS (Energy Avalanche Susceptibility), and has passed full-function reliability qualification.
Features
AI Translation
- 100% guaranteed EAS (Energy Avalanche Susceptibility) rated
- Green/RoHS-compliant devices available
- Ultra-low gate charge
- Excellent dV/dt immunity
- Advanced high cell density trench technology
In-Stock: 2,502
2,502 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4181 | $ 0.42 |
| 10+ | $ 0.3286 | $ 3.29 |
| 30+ | $ 0.2896 | $ 8.69 |
| 100+ | $ 0.2408 | $ 24.08 |
| 500+ | $ 0.2148 | $ 107.40 |
| 1,000+ | $ 0.2017 | $ 201.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.029nF | |
| Gate Charge(Qg) | 44.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | PRPAK3x3-8L | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF | |
| RDS(on) | 95mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.029nF | |
| Gate Charge(Qg) | 44.5nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
HSBB0115 utilizes advanced trench MOSFET technology, offering excellent on-resistance RDS(ON) and gate charge, suitable for a wide range of applications. HSBB0115 complies with RoHS and green product requirements, is 100% guaranteed for EAS (Energy Avalanche Susceptibility), and has passed full-function reliability qualification.
Features
AI Translation
- 100% guaranteed EAS (Energy Avalanche Susceptibility) rated
- Green/RoHS-compliant devices available
- Ultra-low gate charge
- Excellent dV/dt immunity
- Advanced high cell density trench technology
C22359236 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



