VBsemi Elec IPB60R120P7-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IPB60R120P7-VB |
| LCSC Part # | C22357153 |
| Packaging | TO-263(D2PAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 25A TO-263(D2PAK) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-263(D2PAK) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 25A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low figure-of-merit (FOM) Ron×Qg
- Ultra-fast body diode
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Applications
AI Translation
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
In-Stock: 1
1 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.358 | $ 3.36 |
| 10+ | $ 2.8706 | $ 28.71 |
| 50+ | $ 2.5816 | $ 129.08 |
| 100+ | $ 2.2879 | $ 228.79 |
| 500+ | $ 2.153 | $ 1076.50 |
| 1,000+ | $ 2.0926 | $ 2092.60 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-263(D2PAK) | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 25A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.9nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Low figure-of-merit (FOM) Ron×Qg
- Ultra-fast body diode
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
Applications
AI Translation
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
- Industrial
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



