VISHAY SUP85N10-10-E3
| Manufacturer | |
| MPN | SUP85N10-10-E3 |
| LCSC Part # | C222562 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 85A TO-220AB |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 665pF | |
| Current - Continuous Drain(Id) | 85A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.55nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 665pF | |
| Current - Continuous Drain(Id) | 85A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.55nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
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Features
AI Translation
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- Compliant to RoHS Directive 2002/95/EC
In-Stock: 524
524 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.4642 | $ 2.46 |
| 10+ | $ 2.3357 | $ 23.36 |
| 50+ | $ 2.2609 | $ 113.05 |
| 100+ | $ 2.1828 | $ 218.28 |
| 500+ | $ 2.1487 | $ 1074.35 |
| 1,000+ | $ 2.1324 | $ 2132.40 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 665pF | |
| Current - Continuous Drain(Id) | 85A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.55nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 665pF | |
| Current - Continuous Drain(Id) | 85A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF | |
| RDS(on) | 12mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.55nF | |
| Gate Charge(Qg) | 160nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Features
AI Translation
- TrenchFET Power MOSFET
- 175 °C Maximum Junction Temperature
- Compliant to RoHS Directive 2002/95/EC
C222562 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



